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Si2302DS-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2302DS-HXY product

Si2302DS-HXY

MOSFETs - Single

N-ChannelMOSFETSOT-23

The Si2302DS is a compact N-Channel MOSFET in a SOT-23 package, optimized for low-voltage switching applications like battery protection and load management.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-voltage applications exceeding 20V

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
20V
Id
2.3A
RDS(on)
60mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

fdcfc70be58373f7f35c2488c2468ac0_2403261654_HXY-MOSFET-Si2302DS-HXY_C22366705.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si2302DS-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, designed for efficient switching in low-voltage circuits.