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SI2302DS-T1-GE3-ES AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2302DS-T1-GE3-ES product

SI2302DS-T1-GE3-ES

MOSFETs - Single

N-ChannelMOSFETSOT-2320V

The SI2302DS-T1-GE3-ES is a 20V N-Channel MOSFET in a SOT-23 package, optimized for low-power switching and DC-DC conversion.

Best for

  • Portable electronics
  • DC-DC converters
  • Load switching

Avoid if

  • High-voltage applications exceeding 20V
  • High-current applications requiring significant heat dissipation

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
20 V
ID
3.3 A
RDS(on)
45 mΩ
Package
SOT-23

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

e032e3080c0a544b3275f4b1b97ecfb2_2210271700_ElecSuper-SI2302DS-T1-GE3-ES_C5224184.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2302DS-T1-GE3-ES: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using advanced trench technology, designed for efficient power switching in compact applications.