ProjectsPricingInsights

Si2303CDS-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2303CDS-T1-GE3-HXY product

Si2303CDS-T1-GE3-HXY

MOSFETs - Single

MOSFETP-ChannelSOT-23

The Si2303CDS-T1-GE3 is a -30V P-Channel MOSFET in a SOT-23 package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection
  • Load switching
  • PWM control

Avoid if

  • High-current applications exceeding 4A
  • High-temperature environments without heat sinking

Check before use

  • Gate threshold voltage compatibility

Key specifications

VDS
-30 V
ID
-4.1 A
RDS(ON)
< 56 mΩ

Compliance & Environment

RoHS
Lead free
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

93b9054628579be24369a84c1c75589a_2403261742_HXY-MOSFET-Si2303CDS-T1-GE3-HXY_C22367269.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si2303CDS-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, suitable for low-voltage switching applications.