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Si2304BDS-T1-E3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2304BDS-T1-E3-HXY product

Si2304BDS-T1-E3-HXY

MOSFETs - Single

MOSFETN-ChannelSOT-23

The Si2304BDS-T1-E3 is a 30V N-Channel MOSFET in a SOT-23 package, optimized for low-voltage switching applications.

Best for

  • Battery management
  • Load switching

Avoid if

  • High-power applications exceeding 1W

Check before use

  • Thermal dissipation limits

Key specifications

VDS
30 V
ID
4 A
RDS(on)
38 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

b23fc09c90f3cfc150d61cbbc6ad03dd_2403261743_HXY-MOSFET-Si2304BDS-T1-E3-HXY_C22367341.pdf

800 KB

Datasheet AI

CAD Models

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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for efficient switching in compact applications.