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Si2304BDS-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2304BDS-T1-GE3-HXY product

Si2304BDS-T1-GE3-HXY

MOSFETs

N-ChannelMOSFETSOT-2330V

The Si2304BDS-T1-GE3 is a 30V, 4A N-Channel MOSFET in a SOT-23 package, designed for efficient switching in battery protection and load management.

Best for

  • Battery protection circuits
  • Load switching

Avoid if

  • High-power applications exceeding 1W dissipation

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
30 V
ID
4 A
RDS(on)
29 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

3aa52910cb4028af21c4f50370120778_2403261743_HXY-MOSFET-Si2304BDS-T1-GE3-HXY_C22367342.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si2304BDS-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, optimized for low RDS(on) and low gate charge.