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SI2305-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2305-HXY product

SI2305-HXY

MOSFETs - Single

MOSFETP-ChannelSOT-23

The SI2305-HXY is a P-Channel MOSFET in a SOT-23 package, designed for low-voltage switching applications.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-voltage applications exceeding -20V

Check before use

  • Thermal dissipation in compact SOT-23 layouts

Key specifications

VDS
-20 V
ID
-5 A
RDS(ON)
< 45 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

d53c77a77dfb6102becd541742f3fb7b_2207201830_HXY-MOSFET-SI2305-HXY_C4748718.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2305-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, optimized for low-voltage operation.