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Si2305CDS-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2305CDS-T1-GE3-HXY product

Si2305CDS-T1-GE3-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-23Load Switch

The Si2305CDS-T1-GE3 is a P-Channel enhancement mode MOSFET in a SOT-23 package, designed for low-voltage switching applications.

Best for

  • Load switching
  • PWM control

Avoid if

  • High-power applications exceeding 1.4W dissipation

Check before use

  • Gate drive voltage compatibility

Key specifications

Vds
-20 V
Id
-5 A
RDS(on)
40 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementGeneral Switching

Datasheet

d86e84cce2875371ce87228c025a3e29_2403251714_HXY-MOSFET-Si2305CDS-T1-GE3-HXY_C22366439.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si2305CDS-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET utilizing trench technology, optimized for low RDS(on) and low gate charge.