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SI2305CDS-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2305CDS-T1-GE3 product

SI2305CDS-T1-GE3

MOSFETs - Single

P-ChannelMOSFETTrenchFETSOT-23

The Si2305CDS-T1-GE3 is a high-performance P-Channel TrenchFET MOSFET optimized for low-voltage power management in portable electronics.

Best for

  • Portable device power management
  • Load switching

Avoid if

  • High-voltage applications exceeding 8V

Check before use

  • Thermal design for continuous current

Key specifications

VDS
-8 V
ID
-5.8 A
RDS(on)
0.035 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power ManagementPortable Electronics

Datasheet

3753ff1189b5486e9ad18d4fe80520df_1809192317_Vishay-Intertech-SI2305CDS-T1-GE3_C37577.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2305CDS-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel 8V MOSFET from Vishay Siliconix, utilizing TrenchFET technology for efficient power switching.