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Si2306BDS-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2306BDS-T1-GE3-HXY product

Si2306BDS-T1-GE3-HXY

MOSFETs - Single

N-ChannelMOSFETSOT-2330V

The Si2306BDS-T1-GE3 is a 30V, 4A N-Channel MOSFET in a SOT-23 package, optimized for low-voltage switching and battery management.

Best for

  • Battery management
  • Load switching

Avoid if

  • High-power applications exceeding 1W dissipation

Check before use

  • Thermal design
  • Gate drive levels

Key specifications

VDS
30 V
ID
4 A
RDS(on)
38 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

5301067e3d47e8010314c36e468b52c2_2403261743_HXY-MOSFET-Si2306BDS-T1-GE3-HXY_C22367336.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si2306BDS-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET designed for efficient switching in compact applications.