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Si2307BDS-T1-E3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2307BDS-T1-E3-HXY product

Si2307BDS-T1-E3-HXY

MOSFETs

P-ChannelMOSFETSOT-2330V

The Si2307BDS-T1-E3 is a P-Channel MOSFET in a SOT-23 package, designed for low-voltage switching and battery protection.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-power applications exceeding 1.32W

Check before use

  • Gate drive voltage levels

Key specifications

VDS
-30 V
ID
-4.1 A
RDS(ON)
48 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

0545320f23e7b90dcc731d6c4638465e_2403261742_HXY-MOSFET-Si2307BDS-T1-E3-HXY_C22367257.pdf

800 KB

Datasheet AI

CAD Models

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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, optimized for low gate charge and low on-resistance.