Si2307CDS-T1-GE3-HXY Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

Si2307CDS-T1-GE3-HXY product

The Si2307CDS-T1-GE3 is a P-channel enhancement mode MOSFET in a SOT-23 package, designed for battery protection, load switching, and PWM applications.

Best for

Battery protection
Load switching
PWM applications

Avoid if

High-power applications exceeding 1.32W dissipation

Check before use

Thermal dissipation requirements on the PCB

Key specifications

VDS: -30 V
ID: -4.1 A
RDS(on): 48 mΩ

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementConsumer Electronics

Datasheet

e1377510157d025ed5dd7c9f8361bb5b_2403261742_HXY-MOSFET-Si2307CDS-T1-GE3-HXY_C22367262.pdf

800 KB

CAD Models

Download ECAD models for Si2307CDS-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel MOSFET using advanced trench technology, optimized for low gate charge and low RDS(on) at gate voltages as low as 2.5V.