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SI2307CDS-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2307CDS-T1-GE3 product

SI2307CDS-T1-GE3

MOSFETs - Single

P-ChannelMOSFET30VSOT-23

The Si2307CDS-T1-GE3 is a P-Channel 30V TrenchFET MOSFET optimized for load switching in portable electronics, offering a balance of low on-resistance and compact SOT-23 packaging.

Best for

  • Portable device load switching
  • Battery management circuits

Avoid if

  • High-current applications exceeding 3A
  • Extreme thermal environments without adequate PCB heat sinking

Check before use

  • Gate drive voltage compatibility
  • Thermal dissipation requirements

Key specifications

VDS
-30 V
ID
-2.7 A
RDS(on)
0.088 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Portable DevicesLoad Switching

Datasheet

b6ee8c84d43bf10cc7ac43771d603adf_1806131626_Vishay-Intertech-SI2307CDS-T1-GE3_C141561.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2307CDS-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel 30V MOSFET from Vishay Siliconix, utilizing TrenchFET technology for efficient power switching in small-form-factor applications.