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Si2308BDS-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2308BDS-T1-GE3-HXY product

Si2308BDS-T1-GE3-HXY

MOSFETs - Single

N-ChannelMOSFET60VSOT-23-3L

The Si2308BDS-T1-GE3 is a 60V, 4.5A N-Channel MOSFET in a SOT-23-3L package, optimized for low-voltage gate drive and efficient switching.

Best for

  • Battery protection circuits
  • Load switching
  • PWM control

Avoid if

  • Applications requiring currents significantly higher than 4.5A

Check before use

  • Thermal dissipation capabilities of the PCB layout

Key specifications

VDS
60 V
ID
4.5 A
RDS(on)
85 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

0ec8133697a1cdf44b88aada9ecb65c4_2403251714_HXY-MOSFET-Si2308BDS-T1-GE3-HXY_C22366420.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si2308BDS-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for high-efficiency switching, battery protection, and power management.