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SI2309-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2309-HXY product

SI2309-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-2360V

The SI2309-HXY is a -60V P-Channel MOSFET in a SOT-23 package, suitable for small power switching and load management.

Best for

  • Load switching
  • PWM control

Avoid if

  • Applications requiring high current > 2A
  • High-temperature environments without adequate cooling

Check before use

  • Gate drive voltage levels
  • Thermal dissipation

Key specifications

VDS
-60 V
ID
-2 A
RDS(ON)
<200 mOhm

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementGeneral Switching

Datasheet

01bc730210c3b45433e43e73183b2fc6_2209061730_HXY-MOSFET-SI2309-HXY_C5148659.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2309-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET designed for high-density power switching applications.