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SI2309CDS-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2309CDS-T1-GE3-HXY product

SI2309CDS-T1-GE3-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-23

The SI2309CDS-T1-GE3 is a P-channel enhancement mode MOSFET in a SOT-23 package, rated for -60V and -2A.

Best for

  • Load switching
  • PWM control

Avoid if

  • High-current applications exceeding 2A

Check before use

  • Thermal management in SOT-23 package

Key specifications

VDS
-60 V
ID
-2 A
RDS(ON)
<200 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

c871158aca8862e90df025cc34424107_2403261736_HXY-MOSFET-SI2309CDS-T1-GE3-HXY_C22366725.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2309CDS-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high cell density, trench-based P-channel MOSFET designed for small power switching and load switch applications.