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SI2309DS AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2309DS product

SI2309DS

MOSFETs - Single

P-ChannelMOSFETSOT-2360V

The SI2309DS is a 60V P-Channel MOSFET in a SOT-23 package, designed for load switching and logic level shifting applications.

Best for

  • Load switching
  • Power management
  • Logic level shifting

Avoid if

  • High-current applications exceeding 1.6A
  • Extreme thermal environments without adequate heat sinking

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
-60 V
ID
-1.6 A
RDS(ON)
<200 mΩ
Package
SOT-23

Compliance & Environment

RoHS
Y
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541100080.0

Application

Power SwitchingLoad Switching

Datasheet

e19e1197924c07e231ae37bd3347881f_2209271730_TECH-PUBLIC-SI2309DS_C5182077.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2309DS: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The SI2309DS is a P-Channel power MOSFET manufactured by TECH PUBLIC, featuring a 60V drain-source breakdown voltage and a continuous drain current of -1.6A.