The SI2309S is a P-Channel enhancement mode MOSFET from BORN Semiconductor, optimized for low on-resistance using trench technology.
SI2309S AI Analysis:
Datasheet, Specs, Alternatives & ECAD
AI summary
Key specifications
- Vds
- -60V
- Id
- -1.9A
- Rds(on)
- 170mΩ (typ)
Compliance & Environment
- RoHS
- -
- REACH
- -
- MSL
- -
- ECCN
- -
- HTSUS
- -
Application
Power ManagementGeneral Switching
Datasheet
CAD Models
Download ECAD models for SI2309S: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.
EDA Symbol
Schematic symbol for your EDA tool
PCB Footprint
Land pattern for PCB layout
3D Model
STEP file for mechanical design
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Alternative components
Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.
