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SI2310-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2310-HXY product

SI2310-HXY

MOSFETs

N-ChannelMOSFETSOT-2360V

The SI2310 is a 60V, 3A N-Channel MOSFET in a SOT-23 package, ideal for low-voltage switching and battery protection.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • High-power applications exceeding 1.7W dissipation

Check before use

  • Thermal dissipation requirements on the PCB

Key specifications

VDS
60 V
ID
3 A
RDS(on)
85 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

03ac1d361eda45700b9bb4892002bdea_2212161130_HXY-MOSFET-SI2310-HXY_C4748716.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2310-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The SI2310 is an N-Channel enhancement mode MOSFET using trench technology, designed for efficient switching in compact applications.