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SI2312BDS-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2312BDS-T1-GE3 product

SI2312BDS-T1-GE3

MOSFETs - Single

MOSFETN-Channel20VSOT-23

The SI2312BDS-T1-GE3 is a 20V N-Channel TrenchFET MOSFET in a compact SOT-23 package, suitable for low-voltage switching applications.

Best for

  • Low-voltage power management
  • Signal switching

Avoid if

  • High-power applications exceeding thermal limits

Check before use

  • PCB thermal layout

Key specifications

VDS
20 V
ID
5.0 A
RDS(on)
31 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

General Power

Datasheet

a311d36b0265cc2ad93f94b745cd0625_1810311714_Vishay-Intertech-SI2312BDS-T1-GE3_C10490.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2312BDS-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel 20V MOSFET designed for efficient power switching in small-form-factor electronics.