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Si2312CDS-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2312CDS-T1-GE3-HXY product

Si2312CDS-T1-GE3-HXY

MOSFETs - Single

N-ChannelMOSFETSOT-2320V

The Si2312CDS-T1-GE3 is a 20V, 6A N-Channel MOSFET in a SOT-23 package, optimized for low-voltage switching applications.

Best for

  • Battery protection circuits
  • Load switching

Avoid if

  • High-power applications exceeding 0.35W dissipation

Check before use

  • Thermal design and continuous current limits

Key specifications

VDS
20 V
ID
6 A
RDS(on)
22 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

62acd679b82031f357af0ea8185bc8ac_2403261654_HXY-MOSFET-Si2312CDS-T1-GE3-HXY_C22367213.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si2312CDS-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for low-voltage switching, battery protection, and load switch applications.