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SI2312CDS-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2312CDS-T1-GE3 product

SI2312CDS-T1-GE3

MOSFETs - Single

N-ChannelMOSFETSOT-23TrenchFET

The Si2312CDS is a high-performance 20V N-Channel TrenchFET MOSFET in a compact SOT-23 package, optimized for efficient power management in portable electronics.

Best for

  • Portable power management
  • Load switching

Avoid if

  • High-voltage applications exceeding 20V
  • High-power designs requiring significant heatsinking

Check before use

  • Thermal derating curves
  • Gate drive voltage levels

Key specifications

VDS
20 V
ID
6 A
RDS(on)
31.8 mΩ
Package
SOT-23

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power ManagementPortable Electronics

Datasheet

7d85bc18fd603a0098e3b31a2abe6169_1806122023_Vishay-Intertech-SI2312CDS-T1-GE3_C142518.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2312CDS-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement-mode power MOSFET designed by Vishay Siliconix using TrenchFET technology, rated for 20V drain-source voltage.