SI2318DS-T1-E3-MS Datasheet, Specs, Alternatives & ECAD | MSKSEMI | PartGenie

AI summary

SI2318DS-T1-E3-MS product

The SI2318DS-T1-E3-MS is a 40V N-Channel Trench MOSFET in a SOT-23 package, optimized for high-efficiency switching in portable electronics and power management circuits.

Best for

Load switching
Vcore power management
Portable instrumentation

Avoid if

Applications requiring high continuous current beyond SOT-23 thermal limits

Check before use

Thermal dissipation requirements
Gate drive voltage compatibility

Key specifications

VDS: 40 V
ID: 4 A
RDS(on): 36 mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementConsumer Electronics

Datasheet

5113ec74c5f795f1904fdb339e2e8cd8_2212290930_MSKSEMI-SI2318DS-T1-E3-MS_C5343294.pdf

800 KB

CAD Models

Download ECAD models for SI2318DS-T1-E3-MS: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET using trench DMOS technology, housed in a compact SOT-23 package.