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SI2319CDS-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2319CDS-T1-GE3 product

SI2319CDS-T1-GE3

MOSFETs - Single

P-ChannelMOSFET40VSOT-23

The Si2319CDS is a P-Channel 40V TrenchFET MOSFET in a SOT-23 package, designed for load switching and DC/DC converter applications.

Best for

  • Load switching
  • DC/DC conversion

Avoid if

  • High-current applications exceeding 4A

Check before use

  • Thermal design and PCB copper area for heat dissipation

Key specifications

Vds
-40 V
Id
-4.4 A
Rds(on)
0.077 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

PowerIndustrial

Datasheet

MMCID00011-14.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2319CDS-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel 40V power MOSFET from Vishay Siliconix, utilizing TrenchFET technology for efficient switching.