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Si2323DDS-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2323DDS-T1-GE3 product

Si2323DDS-T1-GE3

MOSFETs - Single

P-ChannelMOSFETSOT-23

The Si2323DDS-T1-GE3 is a high-performance P-Channel TrenchFET MOSFET designed for efficient power management in compact SOT-23 packages.

Best for

  • Load switching
  • DC/DC conversion

Avoid if

  • High-current applications exceeding thermal limits

Check before use

  • Gate drive voltage levels

Key specifications

Vds
-20 V
Id
-5.3 A
Rds(on)
0.039 Ohm

Compliance & Environment

RoHS
Y
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power Management

Datasheet

2d4dd9713a434c2eeecd66a99c4aa4d9_1809291541_Vishay-Intertech-Si2323DDS-T1-GE3_C165449.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si2323DDS-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 20V P-Channel MOSFET from Vishay Siliconix, optimized for low on-resistance and high-speed switching.