ProjectsPricingInsights

Si2323DS-T1-E3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2323DS-T1-E3-HXY product

Si2323DS-T1-E3-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-23Trench

The Si2323DS-T1-E3 is a P-Channel MOSFET in a SOT-23 package, designed for low-voltage switching and PWM applications.

Best for

  • Load switching
  • PWM control

Avoid if

  • High-voltage applications exceeding -20V

Check before use

  • Thermal design for 1.4W power dissipation

Key specifications

VDS
-20 V
ID
-5 A
RDS(on)
<40 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

29ef1554ff9ef7e18d6539618ef5247a_2403251714_HXY-MOSFET-Si2323DS-T1-E3-HXY_C22366437.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si2323DS-T1-E3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, optimized for low-voltage operation.