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SI2323DS-T1-E3-MS AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2323DS-T1-E3-MS product

SI2323DS-T1-E3-MS

MOSFETs - Single

P-ChannelMOSFETSOT-23Trench DMOS

The SI2323DS-T1-E3-MS is a P-Channel trench DMOS MOSFET in a SOT-23 package, rated for -20V and -4.5A.

Best for

  • Load switching
  • Fast switching circuits

Avoid if

  • High-voltage applications exceeding -20V

Check before use

  • Thermal dissipation limits in compact PCB layouts

Key specifications

VDS
-20 V
ID
-4.5 A
RDS(ON)
40 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

2e94e95926833d92ad1d8e62f3f1f233_2212290930_MSKSEMI-SI2323DS-T1-E3-MS_C5343295.pdf

800 KB

Datasheet AI

CAD Models

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode power MOSFET designed for high-efficiency switching applications.