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Si2323DS-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2323DS-T1-GE3-HXY product

Si2323DS-T1-GE3-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-23

The Si2323DS-T1-GE3 is a P-Channel MOSFET in a SOT-23 package, designed for low-voltage switching applications.

Best for

  • Load switching
  • PWM control

Avoid if

  • High-voltage applications exceeding -20V

Check before use

  • Thermal dissipation limits

Key specifications

VDS
-20 V
ID
-5 A
RDS(ON)
40 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

1d6282a7fc4435889657369b6817c0a8_2403251714_HXY-MOSFET-Si2323DS-T1-GE3-HXY_C22366438.pdf

800 KB

Datasheet AI

CAD Models

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel Enhancement Mode MOSFET using trench technology, optimized for low-voltage load switching and PWM control.