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SI2325DS-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2325DS-T1-GE3 product

SI2325DS-T1-GE3

MOSFETs - Single

P-Channel150VMOSFETSOT-23

The Si2325DS is a P-Channel 150V TrenchFET MOSFET designed for high-voltage applications like active clamp circuits in DC/DC power supplies.

Best for

  • Active clamp circuits
  • DC/DC power supplies

Avoid if

  • Applications requiring high current handling beyond 0.7A

Check before use

  • Thermal design for SOT-23 package
  • Gate drive voltage levels

Key specifications

VDS
-150 V
ID
-0.69 A
RDS(on)
1.2 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power SuppliesIndustrial

Datasheet

2d9559abeed7d57a7011c4dca121fe3f_1912111437_Vishay-Intertech-SI2325DS-T1-GE3_C60773.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2325DS-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The Si2325DS is a P-Channel 150V TrenchFET power MOSFET housed in a compact SOT-23 package.