Si2328DS-T1-GE3-HXY Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

Si2328DS-T1-GE3-HXY product

The Si2328DS-T1-GE3 is a 100V N-Channel SGT MOSFET in a SOT-23-3L package, suitable for consumer electronics, motor control, and synchronous rectification.

Best for

Consumer electronics power supplies
Motor control circuits
Synchronous rectification

Avoid if

Applications requiring continuous currents significantly above 5A
High-power designs exceeding 1W dissipation without robust cooling

Check before use

Thermal design
Gate drive voltage levels

Key specifications

VDS: 100 V
ID: 5 A
RDS(on): 140 mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Consumer ElectronicsMotor ControlPower Supply

Datasheet

a388dc2fbbf85663231ec6d046fde519_2403261740_HXY-MOSFET-Si2328DS-T1-GE3-HXY_C22367049.pdf

800 KB

CAD Models

Download ECAD models for Si2328DS-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel SGT (Shielded Gate Trench) enhancement mode MOSFET designed for high-efficiency switching applications.