ProjectsPricingInsights

Si2329DS-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2329DS-T1-GE3-HXY product

Si2329DS-T1-GE3-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-23

The Si2329DS-T1-GE3 is a P-Channel MOSFET in a SOT-23 package, optimized for low-voltage switching and PWM control.

Best for

  • Load switching
  • PWM control

Avoid if

  • High-voltage applications exceeding -20V

Check before use

  • Thermal design for 1.4W dissipation

Key specifications

VDS
-20V
ID
-5A
RDS(ON)
40mΩ
Package
SOT-23

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

5ae63a0c922b1cf0b3531a0316abd2d3_2403251714_HXY-MOSFET-Si2329DS-T1-GE3-HXY_C22366441.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si2329DS-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET designed for high-efficiency switching applications.