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SI2333-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2333-HXY product

SI2333-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-23

The SI2333-HXY is a P-channel enhancement mode MOSFET in a SOT-23 package, designed for load switching and PWM applications.

Best for

  • Load switching
  • Battery management

Avoid if

  • High-power applications exceeding 2W dissipation

Check before use

  • Thermal dissipation requirements on the PCB

Key specifications

VDS
-20 V
ID
-6.5 A
RDS(on)
28 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

247313cf5b2bc43e9f367bb8352010f7_2207201830_HXY-MOSFET-SI2333-HXY_C4748717.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2333-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel MOSFET utilizing advanced trench technology, optimized for low on-resistance in compact applications.