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SI2333CDS-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2333CDS-T1-GE3 product

SI2333CDS-T1-GE3

MOSFETs - Single

P-ChannelMOSFETSOT-2312V

The SI2333CDS-T1-GE3 is a 12V P-Channel TrenchFET MOSFET designed for efficient load and PA switching in compact SOT-23 packages.

Best for

  • Load switching
  • PA switching
  • Portable electronics

Avoid if

  • High-voltage applications exceeding 12V
  • High-current designs requiring superior thermal dissipation

Check before use

  • Thermal resistance RthJA
  • Gate drive voltage levels

Key specifications

VDS
-12 V
ID
-5.1 A
RDS(on)
35 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Load SwitchPA Switch

Datasheet

55269bf1c9d7994b7751c4d32dceecd5_1809201810_Vishay-Intertech-SI2333CDS-T1-GE3_C48179.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2333CDS-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement-mode power MOSFET from Vishay Siliconix, optimized for low-voltage switching applications.