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SI2333DDS-T1-GE3-MS AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2333DDS-T1-GE3-MS product

SI2333DDS-T1-GE3-MS

MOSFETs - Single

P-ChannelMOSFETSOT-23Trench DMOS

The SI2333DDS-T1-GE3-MS is a -12V, -5.5A P-Channel MOSFET in a SOT-23 package, optimized for high-efficiency switching in portable electronics.

Best for

  • Portable electronics
  • Load switching
  • Battery management

Avoid if

  • High-voltage applications exceeding -12V

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
-12 V
ID
-5.5 A
RDS(ON)
25 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Portable ElectronicsPower Management

Datasheet

0f884f00a1d959fe73073a7a766ec0d3_2212290930_MSKSEMI-SI2333DDS-T1-GE3-MS_C5343298.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2333DDS-T1-GE3-MS: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode power MOSFET utilizing trench DMOS technology, designed for fast switching and low on-state resistance.