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SI2333DS-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2333DS-T1-GE3 product

SI2333DS-T1-GE3

MOSFETs - Single

P-ChannelMOSFETSOT-2312V

The Si2333DS is a 12V P-Channel TrenchFET MOSFET in a compact SOT-23 package, optimized for low-voltage load and PA switching applications.

Best for

  • Load switching
  • PA switching

Avoid if

  • Applications requiring high-voltage blocking (>12V)

Check before use

  • Thermal dissipation limits in steady-state operation

Key specifications

VDS
-12 V
ID
-5.3 A
RDS(on)
32 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541210095.0

Application

Power Management

Datasheet

9d88fb63afc13e6fa0e089279234d54b_2103231737_Vishay-Intertech-SI2333DS-T1-GE3_C727544.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2333DS-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel power MOSFET manufactured by Vishay Siliconix, designed for high-efficiency switching in small-form-factor electronics.