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SI2336DS-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2336DS-T1-GE3 product

SI2336DS-T1-GE3

MOSFETs - Single

N-ChannelMOSFET30VSOT-23

The Si2336DS-T1-GE3 is a 30V N-Channel TrenchFET MOSFET designed for efficient power switching in compact DC/DC and boost converter circuits.

Best for

  • DC/DC converters
  • Boost converters
  • Low-power switching

Avoid if

  • Applications requiring high-current handling beyond SOT-23 thermal limits

Check before use

  • Thermal dissipation on PCB
  • Gate drive voltage compatibility

Key specifications

VDS
30 V
ID
5.2 A
RDS(on)
0.042 Ω

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power Management

Datasheet

dc7377dbb6c083fbdf1f51cad22517f1_2103221711_Vishay-Intertech-SI2336DS-T1-GE3_C727324.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2336DS-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 30V N-Channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology, packaged in a standard SOT-23 (TO-236) footprint.