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Si2342DS-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2342DS-T1-GE3-HXY product

Si2342DS-T1-GE3-HXY

MOSFETs - Single

MOSFETN-ChannelSOT-2320V

The Si2342DS-T1-GE3 is a 20V, 7A N-Channel MOSFET in a SOT-23 package, designed for efficient switching and battery protection.

Best for

  • Battery protection circuits
  • Low-voltage switching
  • PWM control

Avoid if

  • High-voltage applications exceeding 20V

Check before use

  • Thermal dissipation limits in high-current applications

Key specifications

VDS
20 V
ID
7 A
RDS(on)
17 mΩ (max @ 4.5V)

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

e75670acd73f26a1812e982c28b12deb_2403261739_HXY-MOSFET-Si2342DS-T1-GE3-HXY_C22366944.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si2342DS-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET using trench technology, optimized for low RDS(ON) and low gate charge.