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Si2343DS-T1-E3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2343DS-T1-E3-HXY product

Si2343DS-T1-E3-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-23

The Si2343DS-T1-E3 is a P-Channel MOSFET in a SOT-23 package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection
  • Load switching
  • PWM control

Avoid if

  • Applications requiring high-current handling beyond -4.1A

Check before use

  • Thermal design and gate drive voltage levels

Key specifications

VDS
-30 V
ID
-4.1 A
RDS(ON)
<56 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

1632fcd38a0ba8b5e1e2178a8217b8ab_2403261742_HXY-MOSFET-Si2343DS-T1-E3-HXY_C22367252.pdf

800 KB

Datasheet AI

CAD Models

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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, suitable for battery protection and load switching.