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SI2343DS-T1-E3-MS AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2343DS-T1-E3-MS product

SI2343DS-T1-E3-MS

MOSFETs - Single

P-ChannelMOSFETSOT-23

The SI2343DS-T1-E3-MS is a P-Channel trench DMOS MOSFET in a SOT-23 package, optimized for high-efficiency switching in portable electronics.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-power industrial applications exceeding 1.5W dissipation

Check before use

  • Gate drive voltage compatibility

Key specifications

Vdss
-30 V
Id
-4.0 A
Rds(on)
45 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery ManagementPortable Electronics

Datasheet

a01b09ad6799359f2d7e0e50d7b47286_2212290930_MSKSEMI-SI2343DS-T1-E3-MS_C5343296.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2343DS-T1-E3-MS: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode power MOSFET utilizing trench DMOS technology, suitable for fast switching applications.