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Si2343DS-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2343DS-T1-GE3-HXY product

Si2343DS-T1-GE3-HXY

MOSFETs

P-ChannelMOSFETSOT-2330V

The Si2343DS-T1-GE3 is a 30V P-Channel MOSFET in a SOT-23 package, designed for efficient switching and battery protection.

Best for

  • Battery protection
  • Load switching
  • PWM control

Avoid if

  • Applications requiring high-voltage or high-current beyond the -30V/-4.1A rating.

Check before use

  • Thermal dissipation requirements in the SOT-23 package.

Key specifications

VDS
-30 V
ID
-4.1 A
RDS(on)
48 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

0800b3773cad0b049d21237b759b7225_2403261742_HXY-MOSFET-Si2343DS-T1-GE3-HXY_C22367253.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si2343DS-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, optimized for low RDS(ON) and low gate charge.