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SI2356DS-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2356DS-T1-GE3 product

SI2356DS-T1-GE3

MOSFETs - Single

N-ChannelMOSFET40VSOT-23TrenchFET

The Si2356DS is a 40V N-Channel TrenchFET MOSFET in a compact SOT-23 package, designed for efficient power management in small-form-factor electronics.

Best for

  • Portable power management
  • Load switching

Avoid if

  • High-power applications exceeding thermal limits of SOT-23

Check before use

  • Thermal dissipation capability of the PCB

Key specifications

VDS
40 V
ID
4.3 A
RDS(on)
0.051 Ω
Package
SOT-23

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power ManagementConsumer Electronics

Datasheet

CAD Models

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EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The Si2356DS is a 40V N-Channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology to provide low on-resistance in a standard SOT-23 package.