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SI2369DS-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2369DS-T1-GE3 product

SI2369DS-T1-GE3

MOSFETs - Single

P-ChannelMOSFET30VSOT-23

The SI2369DS-T1-GE3 is a high-performance P-Channel TrenchFET MOSFET designed for power management in mobile computing and DC/DC conversion applications.

Best for

  • Load switching
  • Notebook power management
  • DC/DC converters

Avoid if

  • Applications requiring higher than 30 V or currents exceeding 7.6 A

Check before use

  • Thermal dissipation capabilities of the PCB layout

Key specifications

VDS
-30 V
ID
-7.6 A
RDS(on)
0.029 Ω

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power ManagementMobile Computing

Datasheet

si2369d.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2369DS-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 30 V P-Channel MOSFET from Vishay Siliconix, optimized for low on-resistance and efficient switching in compact SOT-23 packages.