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Si2374DS-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2374DS-T1-GE3-HXY product

Si2374DS-T1-GE3-HXY

MOSFETs - Single

N-ChannelMOSFETSOT-2320V

The Si2374DS-T1-GE3 is a 20V N-channel MOSFET in a SOT-23 package, optimized for low-voltage switching applications.

Best for

  • Battery management
  • Low-voltage load switching

Avoid if

  • High-voltage applications exceeding 20V

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
20 V
ID
3 A
RDS(ON)
35 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

eb42a6e84a217d3b9707c51e50ef5547_2403261736_HXY-MOSFET-Si2374DS-T1-GE3-HXY_C22366689.pdf

800 KB

Datasheet AI

CAD Models

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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel enhancement mode MOSFET designed for efficient switching in low-voltage applications.