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Si2392ADS-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2392ADS-T1-GE3-HXY product

Si2392ADS-T1-GE3-HXY

MOSFETs - Single

MOSFETN-Channel100V

The Si2392ADS-T1-GE3 is a 100V N-Channel MOSFET in a SOT-23 package, optimized for low-power switching and battery protection.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-current applications exceeding 5A

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
100 V
ID
5 A
RDS(on)
110 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

145b1fad1e90be48e7aa32b7e5d9e5a7_2403261655_HXY-MOSFET-Si2392ADS-T1-GE3-HXY_C22366485.pdf

800 KB

Datasheet AI

CAD Models

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for efficient switching applications.