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SI3139KE-TP-ES AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI3139KE-TP-ES product

SI3139KE-TP-ES

MOSFETs - Single

P-ChannelMOSFETSOT-523Trench

The SI3139KE-TP-ES is a -20V P-channel trench MOSFET in a compact SOT-523 package, designed for low-power switching and DC-DC conversion.

Best for

  • Portable electronics
  • Load switching
  • DC-DC conversion

Avoid if

  • High current applications exceeding 0.5A

Check before use

  • Gate threshold voltage compatibility

Key specifications

VDS
-20 V
ID
-0.5 A
RDS(on)
580 mΩ

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

ec7d55faedfcc5829b15b65bf6926edb_2308171739_ElecSuper-SI3139KE-TP-ES_C7528007.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI3139KE-TP-ES: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel enhancement mode MOSFET utilizing trench technology, optimized for low gate charge and low on-resistance in small form factor applications.