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Si3932DV-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si3932DV-HXY product

Si3932DV-HXY

MOSFETs - Arrays

Dual MOSFETN-ChannelTrench TechnologySOT-23-6L

The Si3932DV is a dual N-channel enhancement mode MOSFET in a SOT-23-6L package, optimized for battery protection and load switching applications.

Best for

  • Battery protection circuits
  • Compact load switching

Avoid if

  • High-power applications exceeding 4.5A continuous current
  • Environments requiring extreme thermal robustness

Check before use

  • Gate drive voltage levels
  • PCB thermal dissipation area

Key specifications

VDS
30 V
ID
4.5 A
RDS(on)
38 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery protectionLoad switch

Datasheet

ae34cba5c424d768b88fdf0ebf7a07e3_2403261736_HXY-MOSFET-Si3932DV-HXY_C22366665.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si3932DV-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The Si3932DV is a dual N-channel enhancement mode MOSFET utilizing advanced trench technology, designed for efficient switching in compact applications.