ProjectsPricingInsights

SI4134DY-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI4134DY-T1-GE3 product

SI4134DY-T1-GE3

MOSFETs - Single

N-ChannelMOSFET30VTrenchFET

The SI4134DY-T1-GE3 is a 30V N-Channel TrenchFET MOSFET from Vishay Siliconix, optimized for high-efficiency DC/DC conversion in notebook computers.

Best for

  • DC/DC converters
  • Notebook power management

Avoid if

  • Applications requiring voltages above 30V
  • High-temperature environments without proper heatsinking

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
14 A
RDS(on)
0.0140 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8542390001.0

Application

PowerConsumer

Datasheet

cf39a04ff9f3ed76c420b75a2398153d_2011191404_Vishay-Intertech-SI4134DY-T1-GE3_C142600.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI4134DY-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel power MOSFET designed for 30V applications, featuring low on-resistance and optimized gate charge for efficient switching.