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Si4178DY-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si4178DY-T1-GE3 product

Si4178DY-T1-GE3

Transistors

N-ChannelMOSFET30VSO-8

The Si4178DY is a 30V N-Channel TrenchFET MOSFET in an SO-8 package, optimized for notebook power and DC/DC conversion.

Best for

  • Notebook power management
  • Low current DC/DC converters

Avoid if

  • Applications requiring higher than 30V drain-source voltage

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
12 A
RDS(on)
0.021 Ohm

Compliance & Environment

RoHS
Y
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541210095.0

Application

Power

Datasheet

d503897c634d8c74819282de836a633b_1806121748_Vishay-Intertech-Si4178DY-T1-GE3_C75685.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si4178DY-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The Si4178DY is a 30V N-Channel power MOSFET from Vishay Siliconix, utilizing TrenchFET technology for efficient power switching.