SI4202DY-T1-GE3-HXY Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

SI4202DY-T1-GE3-HXY product

The SI4202DY-T1-GE3 is a dual N-channel MOSFET in an SOP-8 package, optimized for 30V switching applications like battery protection and load management.

Best for

Battery protection
Load switching

Avoid if

High-voltage applications exceeding 30V

Check before use

Thermal design
Gate drive voltage

Key specifications

VDS: 30 V
ID: 11.5 A
RDS(on): 30 mΩ

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementIndustrial

Datasheet

cd3a105f28746220e997d22f73267a57_2403261740_HXY-MOSFET-SI4202DY-T1-GE3-HXY_C22367030.pdf

800 KB

CAD Models

Download ECAD models for SI4202DY-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET designed for efficient power switching, featuring low RDS(on) and low gate charge.