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Si4288DY-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si4288DY-HXY product

Si4288DY-HXY

MOSFETs - Arrays

MOSFETDual N-Channel40V

The Si4288DY is a dual N-channel MOSFET in an SOP-8 package, designed for 40V, 12A switching applications.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-power applications exceeding 2.9W dissipation without adequate cooling

Check before use

  • Gate drive voltage levels

Key specifications

VDS
40 V
ID
12 A
RDS(on)
16 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

49b33f12c1b245e48f9616ed0951facc_2403261739_HXY-MOSFET-Si4288DY-HXY_C22366961.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si4288DY-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET using trench technology, optimized for low RDS(on) and low gate charge.