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SI4386DY-T1-E3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI4386DY-T1-E3-HXY product

SI4386DY-T1-E3-HXY

MOSFETs - Single

N-ChannelMOSFET30VSOP-8

The SI4386DY-T1-E3 is a 30V, 18A N-Channel MOSFET in an SOP-8 package, designed for efficient switching and battery protection.

Best for

  • Battery management systems
  • Power switching

Avoid if

  • High-voltage applications exceeding 30V

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
30V
ID
18A
RDS(ON)
6.5mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

7b453c40cc827476b6528c8ef42e2aa6_2403251713_HXY-MOSFET-SI4386DY-T1-E3-HXY_C22366461.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI4386DY-T1-E3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET using advanced trench technology, optimized for low RDS(ON) and low gate charge.